Method for forming MIM in semiconductor device

Details Method for forming MIM in semiconductor device Method for forming MIM in semiconductor device

2011-03-22

2011-03-22

Ha, Nguyen T (Department: 2835)

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

C361S305000, C361S321100, C361S311000, C361S313000

Reexamination Certificate

active

07911763

ABSTRACT:
The present invention relates to a semiconductor device, and more particularly to a method for forming a metal/insulator/metal (MIM). The method comprises the steps of: forming a metal wiring surrounded by the inter-metal dielectric film; forming a plurality of insulating film on the metal wiring in sequence; and forming a metal barrier film on the insulating film, whereby the insulating film functioning as a buffer film can mitigate the stress between the films.

REFERENCES:
patent: 6380079 (2002-04-01), Lee
patent: 6452779 (2002-09-01), Adler et al.
patent: 6466427 (2002-10-01), Chen
patent: 6717202 (2004-04-01), Sugawara et al.
patent: 6734489 (2004-05-01), Morimoto et al.
patent: 7436016 (2008-10-01), Barth et al.

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