Method for forming micro groove structure

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

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C438S734000, C438S945000

Reexamination Certificate

active

06998350

ABSTRACT:
A method of forming a micro groove structure according to the invention has the steps of: (a) forming a mask pattern on a substrate capable of being subjected to dry etching; (b) dry etching the substrate having the mask pattern formed thereon; (c) vapor-phase forming a thin film of a masking material for the dry etching, on a non-etched surface portion of the substrate after the dry etching; and (d) dry etching the substrate having the thin film formed thereon. The steps (a) to (d) are carried out successively.

REFERENCES:
patent: 6106679 (2000-08-01), Westwood
patent: 2003/0091865 (2003-05-01), Chen et al.
patent: 2004/0077178 (2004-04-01), Yang et al.

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