Method for forming metallization structure having flat surface o

Details Method for forming metallization structure having flat surface o Method for forming metallization structure having flat surface o

1983-11-03

1985-05-28

Smith, John D.

Coating processes

Electrical product produced

Condenser or capacitor

156643, 156656, 427 89, 427 90, H01L 21283, H01L 21302

Patent

active

045200416

ABSTRACT:
A metallization structure having a substantially flat surface can be formed on a semiconductor substrate by forming first and second insulating layers on the substrate. The second insulating layer is selectively removed to form grooves therein. Then, a metallic material layer is conformably formed. The metallic layer has grooves corresponding to the grooves of the second insulating layer. A flowable polymer is applied to the surface of the resultant structure to form a layer having a flat surface. The polymer layer and the metallic layer are sequentially ion-etched to expose the second insulating layer. Thus, the metallization structure constituted by the remaining metallic layer and the second insulating layer is formed to have a flat surface.

REFERENCES:
patent: 4025411 (1977-05-01), Hom-Ma

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