Method for forming metallic silicide films on silicon substrates

Details Method for forming metallic silicide films on silicon substrates Method for forming metallic silicide films on silicon substrates

1989-01-24

1990-03-13

Weisstuch, Aaron

Fishing, trapping, and vermin destroying

437196, 2504922, H01L 2124, H01L 21265, H01L 21283

Patent

active

049083341

ABSTRACT:
Metallic silicide films are formed on silicon substrates by contacting the substrates with a low-energy ion beam of metal ions while moderately heating the substrate. The heating of the substrate provides for the diffusion of silicon atoms through the film as it is being formed to the surface of the film for interaction with the metal ions as they contact the diffused silicon. The metallic silicide films provided by the present invention are contaminant free, of uniform stoichiometry, large grain size, and exhibit low resistivity values which are of particular usefulness for integrated circuit production.

REFERENCES:
patent: 4339869 (1982-07-01), Reihl et al.
patent: 4343082 (1982-08-01), Lepselter et al.
patent: 4577396 (1986-03-01), Yamamoto et al.
T. Inada et al., "Layered Structures and Interface Kinetics", Edited by S. Furakawa, KTK Scientific Publishers, Tokyo, 1985, pp. 287-295.

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