Method for forming metal wiring of semiconductor device

Details Method for forming metal wiring of semiconductor device Method for forming metal wiring of semiconductor device

1994-12-21

1995-10-17

Quach, T. N.

Fishing, trapping, and vermin destroying

437 24, 437187, 437189, 437192, H01L 21265, H01L 21283

Patent

active

054591007

ABSTRACT:
A method for forming a metal wiring of a semiconductor device, capable of avoiding a complexity of procedural steps involved in the formation of a metal plug buried in deeper contact holes having different depths in the formation of the metal wiring buried in the contact holes. The method includes the steps of: forming a first insulating film over a wafer; forming contact holes having different depths; depositing a pattern oxide film comprised of a spin-on-glass film over the entire exposed surface of the resulting structure obtained after the formation of the contact holes; forming a photoresist film pattern; etching a selected portion of the pattern oxide film, thereby exposing the contact holes and a portion of the first insulating film disposed in a region where a metal wiring is to be formed; implanting silicon ions in the exposed portion of the first insulating film and lower portions of the exposed contact holes so as to form a seed layer; removing the photoresist film pattern; and depositing a selective metal film over the first insulating film and the lower portions of the exposed contact holes, whereby the selective metal film being grown forms the metal wiring while being buried in the contact holes.

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patent: 5275963 (1994-01-01), Cederbaum et al.
patent: 5282160 (1994-01-01), Yamagata
Hennessy, W. A., et al., "Selective CVD Tungsten on Silicon Implanted SiO.sub.2 ", J. Electrochem. Soc., vol. 135, No. 7, Jul. 1988, pp. 1730-1734.

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