Method for forming metal silicide regions in an integrated...

Details Method for forming metal silicide regions in an integrated... Method for forming metal silicide regions in an integrated...

2007-07-31

2007-07-31

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Gettering of substrate

By layers which are coated, contacted, or diffused

C438S682000

Reexamination Certificate

active

10245447

ABSTRACT:
A method for forming a metal silicide region in a silicon region of a semiconductor substrate. The method comprises forming a metal layer over the silicon region, then in succession forming a titanium and a titanium nitride layer thereover. As the substrate is heated to form the silicide, the titanium getters silicon dioxide on the surface of the silicon region and the titanium nitride promotes the formation of a smooth surface at the interface between the silicide layer and the underlying silicon region.

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