Method for forming metal interconnection of semiconductor...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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C438S597000, C438S675000, C438S672000, C257SE21575, C257SE21576, C257SE21579, C257SE21252

Reexamination Certificate

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11314347

ABSTRACT:
A method for forming a metal interconnection of a semiconductor device avoids over-etching and under-etching through the use of the “self-stop” function of a nitridation layer, to prevent the occurrence of openings and voids in a copper interconnection and to obtain a constant trench depth. The method includes forming nitride films on a semiconductor substrate by primary annealing, the semiconductor substrate being provided with a first IMD film and a tungsten plug; depositing a second IMD film on the semiconductor substrate on which the nitride films are formed; depositing a photoresist on the second IMD film and patterning the photoresist; etching the second IMD film using the patterned photoresist to form a trench; removing the nitride films using a chemical; depositing a copper barrier metal film and a copper seed layer in the trench from which the nitride films are removed, and depositing copper; secondarily annealing the substrate on which the copper is deposited; and planarizing the secondarily annealed substrate by chemical-mechanical polishing.

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patent: 6531386 (2003-03-01), Lim et al.
patent: 7223692 (2007-05-01), Lin et al.
patent: 1232291 (1999-10-01), None

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