Method for forming MESFET having T-shaped gate electrode

Details Method for forming MESFET having T-shaped gate electrode Method for forming MESFET having T-shaped gate electrode

1995-09-21

1997-11-11

Niebling, John

Fishing, trapping, and vermin destroying

437 41, 437228, 437912, 437944, 148DIG100, H01L 21265

Patent

active

056863250

ABSTRACT:
A compound semiconductor transistor has a structure in which a first insulating film is formed only under a overhang of a gate electrode an upper part of which is formed widely, and a second insulating film for threshold voltage adjustment is formed on the side of a gate electrode and the first insulating film.

REFERENCES:
patent: 4839304 (1989-06-01), Morikawa
patent: 4843024 (1989-06-01), Ito
patent: 4859618 (1989-08-01), Shikata et al.
patent: 4978629 (1990-12-01), Komori et al.
patent: 5445977 (1995-08-01), Fujimoto
patent: 5484740 (1996-01-01), Cho
patent: 5496748 (1996-03-01), Hattori et al.

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