Method for forming memristor material and electrode...

Details Method for forming memristor material and electrode... Method for forming memristor material and electrode...

2009-06-17

2010-12-07

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making passive device

Resistor

C257SE21006, C257SE21662

Reexamination Certificate

active

07846807

ABSTRACT:
Ion Implantation is used to form the memristor material and electrode structure with memristance. First, numerous electron-rich element atoms are implanted into a layer made of transition metal or non-metal. Then, a treating process (such as annealing) is proceeded to expel some electron-rich element atoms away the layer. After that, some electron-rich element vacancy rich regions are formed inside the layer, and then a memristor material is formed. Significantly, the usage of ion implantation can precisely control and flexibly adjust the distribution of the implanted atoms, and then both the amount and distribution of these depleted regions can be effectively adjusted. Hence, the quality of the memristor material is improved.

REFERENCES:
patent: 4861750 (1989-08-01), Nogawa et al.
patent: 7456076 (2008-11-01), Menon et al.
patent: 7615459 (2009-11-01), Inoue et al.
patent: 2002/0061604 (2002-05-01), Sitaram et al.
patent: 2009/0317958 (2009-12-01), Tang et al.
patent: 2010/0155720 (2010-06-01), Kaneko

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