Method for forming masks comprising silicon nitride and novel ma

Details Method for forming masks comprising silicon nitride and novel ma Method for forming masks comprising silicon nitride and novel ma

1975-04-16

1977-01-11

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 15, 148175, 148 333, 357 49, H01L 21308

Patent

active

040025110

ABSTRACT:
In the fabrication of integrated circuits, a method is provided for forming masking structures comprising silicon nitride which avoids the stresses and dislocations associated with direct silicon nitride masking as well as the "bird's beak" problems associated with silicon dioxide-silicon nitride composite mask structures. The mask is formed by first forming a silicon dioxide mask having at least one opening through which the substrate is exposed. Then, a mask comprising silicon nitride is formed on the first mask; this mask has at least one opening laterally smaller than the openings in the first mask and respectively in registration with at least some of the openings in said first mask. Thus, the second mask contacts and covers a portion of the exposed silicon substrate under each of the registered openings.
The masked silicon substrate is subjected to a processing step such as oxidation, etching or diffusion which alters the characteristics of those portions of the silicon substrate remaining exposed. During this processing step a second mask serves as a barrier mask.

REFERENCES:
patent: 3664896 (1972-05-01), Duncan
patent: 3771218 (1973-11-01), Langdon
patent: 3783047 (1974-01-01), Paffen et al.
Anantha, "Contact Opening in Shallow Junction Transistors", IBM Tech. Disc. Bull., vol. 11, No. 7, Dec. 1968, p. 857.

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