Method for forming mask pattern of semiconductor device

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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Reexamination Certificate

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07442473

ABSTRACT:
A method for forming a mask pattern of a semiconductor device is disclosed. An example method arranges a main pattern and arranges a first fine auxiliary pattern in the vicinity of the main pattern. The example method also arranges a second fine auxiliary pattern in the vicinity of edges of the main pattern. In the example method, the second fine auxiliary pattern has a predetermined tilt angle with respect to the first fine auxiliary pattern.

REFERENCES:
patent: 6703167 (2004-03-01), LaCour
patent: 2004/0023132 (2004-02-01), Akiyama
patent: 100172561 (1998-10-01), None
patent: 10-1999-0066046 (1999-08-01), None
patent: 10-2003-0056499 (2001-12-01), None

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