Method for forming low temperature polysilicon thin film...

Details Method for forming low temperature polysilicon thin film... Method for forming low temperature polysilicon thin film...

2006-03-07

2009-12-29

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

C438S149000, C438S163000, C257SE21205, C257SE29151, C257SE51005

Reexamination Certificate

active

07638404

ABSTRACT:
A method for forming a low temperature polysilicon thin film transistor with a low doped drain structure comprises: a) forming a polysilicon island on a substrate; b) forming a dielectric layer, a metal layer and a cap layer in sequence cover to the polysilicon island; c) forming a photo-resist patterened layer on the cap layer; d) removing the portion of the metal layer and the portion of the cap layer which are uncovered by the photo-resist patterned layer, and the remaining metal layer is uncovered by the remaining cap layer with a predetermined distance at the same side; e) performing a high concentration ion-doping using the metal layer as a mask; f) removing the portion of the metal layer uncovered by the remaining cap layer; and g) performing a low concentration ion-doping using the metal layer as a mask.

REFERENCES:
patent: 6365497 (2002-04-01), Gonzalez
patent: 6511870 (2003-01-01), Chen et al.
patent: 6544873 (2003-04-01), Yeom et al.
patent: 6596598 (2003-07-01), Krivokapic et al.
patent: 6624473 (2003-09-01), Takehashi et al.

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