Method for forming LOCOS layer in semiconductor device

Details Method for forming LOCOS layer in semiconductor device Method for forming LOCOS layer in semiconductor device

2007-07-24

2007-07-24

Huynh, Andy (Department: 2818)

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Optical characteristic sensed

C430S008000, C430S259000, C430S439000

Reexamination Certificate

active

11322750

ABSTRACT:
A method for forming a LOCOS layer in a semiconductor device includes steps of oxidizing a high voltage region of the semiconductor device to form a LOCOS layer in the high voltage region; and etching the LOCOS layer according to a pattern.

REFERENCES:
patent: 4908328 (1990-03-01), Hu et al.
patent: 5369052 (1994-11-01), Kenkare et al.
Photolithography ( 7 pages ) from website of Answer .com.
Lithography ; except from chapter 12 of the book by Stanley Wolf ( 3 pages ) Lattice Press ( edition 2000).

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