Method for forming line pattern array, photomask having the...

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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C430S311000, C716S030000

Reexamination Certificate

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07820344

ABSTRACT:
A method of forming a line pattern array comprises the steps of setting a layout which includes first continuous line patterns arranged to have a first line width and a second continuous line pattern arranged to have a second line width larger than the first line width and positioned outside the first continuous line patterns; transferring the layout on a wafer; and inducing light scattering by changing an outermost pattern of the first continuous line patterns, which is most closely adjacent to the second continuous line patterns, into a plurality of dotted line patterns, wherein the plurality of the dotted patterns are arranged in a line form in order that a line pattern, which is different from the first continuous line patterns in line width, is formed based on a size of the dotted patterns.

REFERENCES:
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patent: 6977715 (2005-12-01), Wu
patent: 6983444 (2006-01-01), Yang
patent: 2005/0026047 (2005-02-01), Yang
patent: 2006/0093926 (2006-05-01), Fujisawa et al.
patent: 2006/0234139 (2006-10-01), Watson et al.
patent: 10-2005-0066847 (2005-06-01), None
patent: 10-2006-0052324 (2006-05-01), None

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