Method for forming light-transmitting regions

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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Details

C438S054000, C438S072000, C257SE21122

Reexamination Certificate

active

07732244

ABSTRACT:
A method for forming a light-transmitting region comprises providing a support feature. A sacrificial layer is formed over a portion of the support feature, wherein the sacrificial layer comprises an energy-induced swelling material. A light-blocking layer is conformably formed over the support feature to cover the sacrificial layer and the support feature. The support feature, the sacrificial layer, and the light-blocking layer are subjected to an energy source to swell the sacrificial layer until bursting to thereby delaminate a portion of the light-blocking layer from the support feature and leave a light-transmitting region exposed with a portion of the support feature in the light-blocking layer. A gas flow or scrub cleaning force is provided to clean up the light-transmitting region and a top surface of the light-blocking layer remains over the support feature.

REFERENCES:
patent: 5835274 (1998-11-01), Baek
patent: 2001/0019765 (2001-09-01), Kiuchi et al.
patent: 2008/0283730 (2008-11-01), Hartlove et al.
patent: 2008/0291303 (2008-11-01), Onozawa et al.
patent: 2008/0293180 (2008-11-01), Mouli
patent: 2009/0002818 (2009-01-01), Iwabu et al.
patent: WO99/13157 (1999-03-01), None

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