Method for forming light shield process for solid-state...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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C438S075000, C438S098000

Reexamination Certificate

active

06867062

ABSTRACT:
An image sensor includes a substrate containing photosensitive areas; an insulator spanning the substrate; and a first and second layer of a multi-layer metalization structure wherein the first layer forms the light shield regions over portions of the photosensitive area as well as forming circuit interconnections and barrier regions to prevent spiking into the substrate or gates at contacts in the non-imaging area, and the second layer spanning the interconnections and barrier regions of the first layer only over the non-imaging area.

REFERENCES:
patent: 5719075 (1998-02-01), Hawkins et al.
patent: 5846708 (1998-12-01), Hollis et al.
patent: 20030001222 (2003-01-01), Street et al.

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