Method for forming LDD CMOS with oblique implantation

Details Method for forming LDD CMOS with oblique implantation Method for forming LDD CMOS with oblique implantation

1994-12-16

1996-05-14

Thomas, Tom

Fishing, trapping, and vermin destroying

437 35, 437 44, 437 57, H01L 21265, H01L 218238

Patent

active

055167110

ABSTRACT:
A method and structure therefor for the formation of lightly doped drain regions, typically used in the manufacture of a field effect devices. The method includes the steps of providing a semiconductor substrate with a P type well region and an N type well region. Gate electrodes are formed overlying gate dielectric over each P type well and N type well regions. The method then performs a blanket N type implant step at an angle being about 20 degrees and greater from a perpendicular to the gate electrodes into both the P type and N type well regions. The blanket N type implant forms an LDD region in the P type well, and a buried region in the N type well. Sidewall spacers are then formed on edges of the gate electrodes. An N type implant step is then performed on the P type well region to form the source/drain region of a NMOS device. The method then performs two separate P type implants into the N type well, each at different angles and dosages, to form the P type LDD source/drain region for a PMOS device. The PMOS device includes the buried region which acts as a punchthrough stop, typically used to decrease short channel effects.

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Wolf et al., vol. I, Silicon Processing for the VLSI Era, Lattice Press, 1986, pp. 292-294.
Wolf et al., vol. II, Silicon Processing for the VLSI Era, Lattice Press, 1990, pp. 428-434.

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