Method for forming lateral PNP transistor

Details Method for forming lateral PNP transistor Method for forming lateral PNP transistor

1989-03-02

1991-02-26

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 32, 437 27, 437 30, 437917, 148DIG10, 148DIG96, H01L 2122

Patent

active

049961640

ABSTRACT:
A process of forming a lateral PNP transistor includes the steps of: providing a chip of semiconductor material including an isolated N- device region; implanting N dopant material at a relatively low power and low dosage into a selected implant region of the device region; implanting N dopant material at a relatively higher power and higher dosage into the implant region; and forming emitter and collector regions in the device region such that an intrinsic base region is defined between the collector and emitter regions in the implant region.

REFERENCES:
patent: 4045251 (1977-08-01), Graul et al.
patent: 4332627 (1982-06-01), Schmitt et al.
patent: 4390890 (1983-06-01), Bergeron et al.
patent: 4546536 (1985-10-01), Anantha et al.

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