Method for forming large area amorphous semiconductor layer and

Details Method for forming large area amorphous semiconductor layer and Method for forming large area amorphous semiconductor layer and

1985-06-18

1987-04-28

Weisstuch, Aaron

Metal working

Method of mechanical manufacture

Assembling or joining

29574, 29583, 29589, H01L 3118

Patent

active

046602771

ABSTRACT:
A flexible insulating substrate is fed through an amorphous semiconductor layer forming region, and an amorphous semiconductor layer is formed on the substrate continuously and in a wide range along its length. In this manner, an array of photoelectric converting elements is formed continuously along the length of the flexible substrate, the substrate thus formed with the array is cut into a plurality of chips, and each chip having the elements is bonded onto a member supporting driving circuits thereby producing a contact type image sensor capable of sensing a wide range of image simultaneously.

REFERENCES:
patent: 4377723 (1983-03-01), Dalal
patent: 4430185 (1984-02-01), Shimomoto et al.
patent: 4479455 (1984-10-01), Doehler et al.
patent: 4517733 (1985-05-01), Hamano

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