Method for forming Josephson junction devices by radiation

Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k

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505702, 505701, 505730, 427 62, 427 63, 427551, 427552, 257 31, B05D 306, B05D 512, H01L 3922

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052293610

ABSTRACT:
A method for forming an insulating layer in an oxide high-temperature superconductor is described. The oxide high-temperature superconductor is exposed to radiation, whereby an interface showing superconducting characteristics and/or a weak link that is present at an interface in the said oxide high-temperature superconductor is transformed to a thin insulating layer.

REFERENCES:
patent: 5026682 (1991-06-01), Clark et al.
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