Superconductor technology: apparatus – material – process – Processes of producing or treating high temperature... – Producing josephson junction – per se
Patent
1992-09-17
1994-06-14
King, Roy
Superconductor technology: apparatus, material, process
Processes of producing or treating high temperature...
Producing josephson junction, per se
505702, 505701, 505728, 505473, 505474, 505475, 427 62, 427 63, 257 33, 257415, H01L 3924, B05D 512
Patent
active
053210042
ABSTRACT:
A Josephson break junction device suitable for highly sensitive electronic detecting systems. A superconductor film such as YBa.sub.2 Cu.sub.3 O.sub.7 is deposited on a substrate such as a simple-crystal MgO. The film is fractured across a narrow strip by at least one indentation in the substrate juxtaposed from the strip to form a break junction. A transducer is affixed to the substrate for applying a bending movement to the substrate to regulate the distance across the gap formed at the fracture to produce a Josephson turned junction effect. Alternatively, or in addition to the transducer, a bridge of a novel metal is applied across the gap to produce a weak-link junction.
REFERENCES:
patent: 4985117 (1991-01-01), Kurosawa et al.
Moreland et al., "Josephson effect above 77K in YBaCuO break junction", A. Phys. Lett 51(7) Aug. 1987 pp. 540-541.
Moreland et al., "Break junction measurement of the tunneling gap of a thallium-based high-temperature superconductor crystal", Appl. Phys. Lett. 55(14) Oct. 1989, pp. 1463-1465.
Perez Ignacio M.
Scott William R.
Bechtel James B.
King Roy
The United States of America as represented by the Secretary of
Tura James V.
Verona Susan E.
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