Method for forming isolation trenches on a semiconductor substra

Details Method for forming isolation trenches on a semiconductor substra Method for forming isolation trenches on a semiconductor substra

1998-11-24

2000-09-05

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438437, 148DIG50, H01L 2176

Patent

active

061142174

ABSTRACT:
Disclosed is a method for providing an insulation trench on a semiconductor substrate. The method includes the steps of depositing a pad oxide layer and a nitride layer on a semiconductor substrate; etching the nitride layer and the pad oxide layer and depositing a first insulating layer; forming spacers along sidewalls of the pad oxide layer and the nitride layer by anisotropic etching the first insulating layer; forming trenches by etching the semiconductor substrate; forming a trench insulating layer pattern by depositing a second insulating layer and etching the same; and polishing the trench insulating layer pattern.

REFERENCES:
patent: 5498565 (1996-03-01), Gocho et al.
patent: 5679599 (1997-10-01), Mehta
patent: 5911110 (1999-06-01), Yu
patent: 5930644 (1999-07-01), Tsai et al.
patent: 5943590 (1999-08-01), Wang et al.
patent: 5953621 (1999-09-01), Gonzalez et al.

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