Fishing – trapping – and vermin destroying
Patent
1992-06-12
1993-10-26
Fourson, George
Fishing, trapping, and vermin destroying
437228, 437245, 437160, H01L 2176
Patent
active
052565912
ABSTRACT:
A method for forming an isolation region in a semiconductor device using a trench comprising the steps of forming a reaction restraining layer on a semiconductor substrate, removing a portion of the reaction restraining layer corresponding to a trench region for providing an isolation region, forming a reaction film on the entire exposed surface, heat treating the reaction film and the substrate, to form a reaction product film having a predetermined depth in a portion of the reaction film and a portion of the substrate corresponding to said trench region, etching and removing the reaction product film, to form a trench, forming an insulation film for the isolation region such that it fills sufficiently the trench, forming a surface smoothing insulation film on the insulation film for the isolation region, etching back both the insulation films such that their portions located above a predetermined height from the surface of the substrate are removed, and removing the remaining reaction restraining layer.
Fourson George
Gold Star Electron Co. Ltd.
LandOfFree
Method for forming isolation region in semiconductor device usin does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for forming isolation region in semiconductor device usin, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming isolation region in semiconductor device usin will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-959037