Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2005-02-08
2005-02-08
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S444000
Reexamination Certificate
active
06852606
ABSTRACT:
A method for forming an isolation layer of a semiconductor device which is capable of improving isolation characteristics of a highly integrated semiconductor device. The method includes the steps of forming a first insulating layer on a substrate; forming both a first recess in the first isolation region and a plurality of second recesses in the second isolation region by only once applying a photolithography process to the first insulating layer; forming a third recess, which is deeper than the first recess, in the center area of the first recess in the first isolation region; and filling the first, second, third recesses with insulating materials or a thermal oxide layer. In addition, in the semiconductor device in which the isolation region has different widths, the first isolation region which is relatively narrower in width than the second isolation region has a deeper recess than the second isolation region.
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Fourson George
LG Semicon Co., LTD
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