Method for forming isolation layer of semiconductor device

Details Method for forming isolation layer of semiconductor device Method for forming isolation layer of semiconductor device

2005-07-26

2005-07-26

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S433000, C438S435000, C438S437000, C438S447000, C438S524000, C438S525000, C438S714000, C438S739000

Reexamination Certificate

active

06921705

ABSTRACT:
A method for forming an isolation layer of a semiconductor device. The method includes: a) sequentially laminating a pad oxide layer and pad nitride layer on a semiconductor substrate; b) selectively removing the pad nitride layer, selectively removing the pad oxide layer and the substrate, thereby forming a trench in the substrate; c) implanting ions in a direction with a tilted angle into a side wall of the pad nitride layer located in an upper side of the trench; d) removing the side wall portion of the pad nitride layer in the trench, in which the ions are implanted, to form a sloped side wall of the pad nitride layer, wherein the sloped side wall is inclined in an inverse direction; e) filling a HDP oxid layer in an upper surface of an entire structure including the trench; f) planarizing the HDP oxide layer and the pad nitride layer; and g) removing a remaining pad nitride layer, thereby forming an isolation layer.

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