Method for forming isolated regions of silicon utilizing reactiv

Details Method for forming isolated regions of silicon utilizing reactiv Method for forming isolated regions of silicon utilizing reactiv

1977-08-15

1978-08-01

Dean, R.

Metal treatment

Compositions

Heat treating

29576W, 29578, 29580, 148175, 148187, 156643, 156648, 156649, 156653, 156662, 204192E, 204192EC, 357 49, 357 50, H01L 2176, H01L 2700

Patent

active

041040864

ABSTRACT:
A method for isolating regions of silicon involving the formation of openings that have a suitable taper in a block of silicon, thermally oxidizing the surfaces of the openings, and filling the openings with a dielectric material to isolate regions of silicon within the silicon block. The method is particularly useful wherein the openings are made through a region of silicon having a layer of a high doping conductivity.

REFERENCES:
patent: 3500139 (1970-03-01), Frouin et al.
patent: 3508980 (1970-04-01), Jackson et al.
patent: 3575731 (1971-04-01), Hoshi et al.
patent: 3577044 (1971-05-01), Armstrong et al.
patent: 3901737 (1975-08-01), Dash
patent: 3966577 (1976-06-01), Hochberg
patent: 3979237 (1976-09-01), Morcom et al.
patent: 4007104 (1977-02-01), Summers et al.
Doo et al., "Making Monolithic . . . Insulation Isolation Techniques", I.B.M. Tech. Discl. Bull., vol. 8, No. 4, Sep. 165, pp. 659-660.
Abbas; S. A., "Recessed Oxide Isolation Process", Ibid., vol. 20, No. 1, Jun. 1977, pp. 144-145.
Bondur; J. A., "Dry Process Tech. Creative Ion Etching", J. Vac. Sci. Technol., vol. 13, No. 5, Sep./Oct. 1976, pp. 1023-1029.
Bersin; R. L., "Survey of Plasma-Etching Processes", Solid State Technol., May, 1976, pp. 31-36.

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