Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2006-03-22
2009-10-20
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S458000, C438S464000, C438S759000, C257SE21088, C257SE21506, C257SE21519
Reexamination Certificate
active
07605051
ABSTRACT:
A method for forming an internal electrode pattern having a predetermined shape includes the following: a step of forming a conductive layer by applying a metal paste on a first support, the metal paste containing metal powder and a binder; a step of forming a resin layer on a second support, the resin layer having a pattern negative to the internal electrode pattern; a step of compression bonding the first support and the second support to each other in such a manner that the conductive layer and the resin layer are opposite to each other; and a step of removing the second support from the first support so as to transfer a conductive layer to the second support, the conductive layer having the pattern negative to the internal electrode pattern, thereby forming the internal electrode pattern having the predetermined shape on the first support.
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Korean Office Action issued in Korean Patent Application No. KR 10-2007-7014868 dated Nov. 13, 2008.
Korean Office Action issued in Korean Patent Application No. KR 10-2007-7014868 dated Apr. 20, 2009.
Abe Fuyuki
Nagai Atsuo
Nakamura Kengo
Okumura Shinya
Tsujimura Takahiko
Lee Cheung
McDermott Will & Emery LLP
Mulpuri Savitri
Panasonic Corporation
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