Method for forming integrated composite semiconductor devices

Details Method for forming integrated composite semiconductor devices Method for forming integrated composite semiconductor devices

1997-03-14

1999-04-27

Niebling, John F.

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

438459, 438977, 148DIG135, H01L 2130, H01L 2146

Patent

active

058973338

ABSTRACT:
In an improved method for manufacturing an integrated composite semiconductor device according to the present invention, a semiconductor-based stop-etch layer having holes therein at selected sites is disposed over the epoxy or other flowable hardener used in flip-chip bonding. The hardener underneath the openings in the stop-etch layer is subtantially removed via a dry etch applied therethrough, exposing desired structure, such as bonding pads, formerly covered by the hardener. The epoxy underneath the stop-etch layer is substantially preserved.

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patent: 3970819 (1976-07-01), Gates et al.
patent: 5234535 (1993-08-01), Beyer et al.
patent: 5573960 (1996-11-01), Izumi et al.
patent: 5591678 (1997-01-01), Bendik
patent: 5741733 (1998-04-01), Bertagnolli et al.
Tummala, Tao; Rymaszewski, Eugene; and Klopfenstein, Alan; Microelectronics Packaging Handbook Part III, Chapman and Hall, p. 515, 1997.

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