Coating processes – Direct application of electrical – magnetic – wave – or... – Pretreatment of substrate or post-treatment of coated substrate
Reexamination Certificate
2003-11-07
2009-10-13
Chen, Bret (Department: 1792)
Coating processes
Direct application of electrical, magnetic, wave, or...
Pretreatment of substrate or post-treatment of coated substrate
C427S577000, C427S578000, C427S249150
Reexamination Certificate
active
07601402
ABSTRACT:
A method for forming a porous insulating film includes an insulating film forming step and a hole forming step. During the insulating film forming step, plasma processing of an organic siloxane group compound and an organic compound having a polar group forms an insulating film having a siloxane structure. Molecules of the organic compound having a polar group are contained within this siloxane structure. During the hole forming step, excitation gas removes molecules of the organic compound having a polar group to provide holes in the insulating film. According to this method, an insulating film with a predetermined thickness and holes formed uniformly in the thickness direction can be obtained.
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Japanese Office Action (Notification of Reasons for Refusal) dated Aug. 15, 2006 including an English translation of the pertinent portions (Three (13) pages).
Chung Gishi
Kagawa Yoshihisa
Kashiwagi Yusaku
Kawamura Kohei
Chen Bret
Crowell & Moring LLP
Tokyo Electron Limited
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