Semiconductor device manufacturing: process – Making passive device
Reexamination Certificate
2006-01-31
2006-01-31
Kebede, Brook (Department: 2823)
Semiconductor device manufacturing: process
Making passive device
Reexamination Certificate
active
06991992
ABSTRACT:
The present invention relates to a method for manufacturing an inductor being a passive device in RE MEMS, RFCMOS, Bipolor/SiGe and BiCMOS semiconductor devices. According to the present invention, a first negative photoresist layer is covered on a substrate having a lower electrode. A via hole that will become a contact portion of the inductor is then defined by means of an exposure process using a first mask. A second negative photoresist layer is covered on the first negative photoresist layer. Trenches that will become line portions of the inductor are defined by an exposure process using a second mask. A damascene pattern having the via hole and the trenches is formed by means of a developing process and is then buried with copper, thus forming the inductor. Not only a thickness of the trenches in the line portion and a thickness of the via hole in the contact portion can be uniformly controlled, but also their height can be easily controlled. Therefore, that an inductor of a high quality can be manufactured.
REFERENCES:
patent: 5543253 (1996-08-01), Park et al.
patent: 5972193 (1999-10-01), Chou et al.
patent: 5989783 (1999-11-01), Huggins et al.
patent: 6635404 (2003-10-01), Choi et al.
Hynix / Semiconductor Inc.
Kebede Brook
Mayer Brown Rowe & Maw LLP
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