Metal working – Method of mechanical manufacture – Electrical device making
Patent
1985-08-02
1986-12-23
Hearn, Brian E.
Metal working
Method of mechanical manufacture
Electrical device making
29591, 29589, 29577C, H01L 21285, H01L 2188
Patent
active
046303570
ABSTRACT:
A method of forming improved contacts between interconnect layers of an integrated circuit including sputter depositing a metallic lower layer of interconnect material on a target, and patterning the layer of interconnect material to form an interconnect layer. A dielectric layer is then deposited over the interconnect layer, and via holes are formed through the dielectric layer. A polysilicon layer is deposited over the dielectric layer, including the side walls and bottom of the via holes, and then removed from the dielectric layer and the bottom of the via holes, by anisotropic etching, leaving polysilicon on the side walls. Tungsten is then selectively deposited on the bottom and side walls of the via holes forming metal plugs therein, and a second layer of interconnect material is sputter deposited over the dielectric layer and the metal plugs in the via holes thereby forming contacts between the first and second layers of interconnect material.
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Hwang Thomas J.
Rogers Steven H.
Hawk Jr. Wilbert
Hearn Brian E.
NCR Corporation
Quach Tuan N.
Salys Casimer K.
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