Method for forming IGFET devices having improved drain voltage c

Details Method for forming IGFET devices having improved drain voltage c Method for forming IGFET devices having improved drain voltage c

1981-01-22

1983-01-18

Roy, Upendra

Metal treatment

Compositions

Heat treating

29571, 29576B, 148187, 357 91, H01L 21263, H01L 2122, H01L 700, H01L 21265

Patent

active

043690726

ABSTRACT:
A method of providing less than one micron p-n junction regions for IGFET devices in which a high concentration of arsenic is implanted so that its peak lies near the surface of a semiconductor substrate. Phosphorus is also implanted with an energy to provide a maximum concentration below that of the arsenic and of a magnitude at least one order of magnitude less than that of arsenic. An oxidation/anneal step thermally diffuses the implanted ions to form a junction less than one micron in thickness.

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