Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1985-06-27
1987-04-21
Roy, Upendra
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29576B, 148 15, 148187, 148DIG134, 148DIG135, 156612, 427 51, H01L 736, H01L 2120
Patent
active
046594000
ABSTRACT:
A silicon substrate having a controlled oxygen content is sliced to form a wafer. The backside surface of the wafer is mechanically damaged for external gettering, polished, and subjected to heat for annealing to reduce strain and defects near the surface. The surface is then etched and the epitaxial layer formed by first growing an epitaxial layer, removing a substantial portion thereof, and then regrowing the layer to the required thickness. Immediately prior to device processing, an oxide layer is formed by heating the wafer, removing a portion of the epitaxial layer, and placing the wafer in an oxygen atmosphere. After a preselected time period in the oxygen atmosphere, the temperature is gradually reduced.
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Briglia Thomas D.
Chan Joseph J.
Coniglione Philip
Garbis Danny
Granata Amadeo J.
General Instrument Corp.
Roy Upendra
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