Method for forming high dielectric layers using atomic layer...

Details Method for forming high dielectric layers using atomic layer... Method for forming high dielectric layers using atomic layer...

2005-02-01

2005-02-01

Chen, Bret (Department: 1762)

Coating processes

Coating by vapor, gas, or smoke

Mixture of vapors or gases utilized

C427S255360, C427S576000

Reexamination Certificate

active

06849300

ABSTRACT:
A method for manufacturing semiconductor device is disclosed which forms a high dielectric layer using atomic layer deposition (ALD). The method for forming a high dielectric layer having a first metal element, a titanium atom and an oxygen atom includes: on a surface of a substrate, adsorbing a first organic source combining a ligand, wherein the ligand includes at least oxygen and C—H combination in the first metal element; forming an atomic layer of the first metal element and the oxygen by inducing reduction reaction of the first organism source and a NH3gas, which are adsorbed on the surface of the substrate; adsorbing a second organism source combining a ligand, wherein the ligand includes at least oxygen and C—H combination on the titanium; and forming an atomic layer of the titanium and the oxygen by inducing reduction reaction of the second organism source and the NH3gas, which are adsorbed on the surface of the substrate.

REFERENCES:
patent: 5300455 (1994-04-01), Vuillermoz et al.
patent: 5376591 (1994-12-01), Maeda et al.
patent: 5939131 (1999-08-01), Kim et al.
patent: 5970384 (1999-10-01), Yamazaki et al.
patent: 5972430 (1999-10-01), DiMeo et al.
patent: 6008124 (1999-12-01), Sekiguchi et al.
patent: 6214714 (2001-04-01), Wang et al.
patent: 6284655 (2001-09-01), Marsh
patent: 6482740 (2002-11-01), Soininen et al.
patent: 6503561 (2003-01-01), Senzaki et al.

Affiliated with

Also associated with

Rating

Method for forming high dielectric layers using atomic layer... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming high dielectric layers using atomic layer..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming high dielectric layers using atomic layer... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3453657