Coating processes – Coating by vapor – gas – or smoke
Patent
1997-08-04
2000-02-01
King, Roy V.
Coating processes
Coating by vapor, gas, or smoke
427 99, 427527, 4272557, 427309, 438287, C23C 1600, H01L 21336
Patent
active
060200243
ABSTRACT:
A method for forming a metal gate (20) structure begins by providing a semiconductor substrate (12). The semiconductor substrate (12) is cleaned to reduce trap sites. A nitrided layer (14) having a thickness of less than approximately 20 Angstroms is formed over the substrate (12). This nitrided layer prevents the formation of an oxide at the substrate interface and has a dielectric constant greater than 3.9. After the formation of the nitrided layer(14), a metal oxide layer (16) having a permittivity value of greater than roughly 8.0 is formed over the nitrided layer (14). A metal gate (20) is formed over the nitrided layer whereby the remaining composite gate dielectric (14 and 16) has a larger physical thickness but a high-performance equivalent oxide thickness (EOT).
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Cuellar Jesus
Hegde Rama I.
Maiti Bikas
Tobin Philip J.
King Roy V.
Motorola Inc.
Witek Keith E.
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