Method for forming high dielectric capacitor electrode structure

Details Method for forming high dielectric capacitor electrode structure Method for forming high dielectric capacitor electrode structure

1995-10-20

1998-08-11

Ledynh, Bot L.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

3613215, 361303, 361305, 361313, 29 2542, 439239, 439253, 439393, 439396, H01G 406, H01G 700

Patent

active

057936005

ABSTRACT:
A capacitor and electrode structure comprising a PZT ferroelectric layer 17 with a primary component (Pb) and secondary component (Ti), a lower electrode layer 16 formed on the underside of the ferroelectric layer and made up of a special element (Pt) and Ti, and compounds thereof, and a diffusion barrier layer 18 which is formed on the underside of the lower electrode layer and which functions as a diffusion barrier with respect to Pb. The capacitor and the electrode structure, which may be a component of a semiconductor memory device, suppress fluctuations in the composition of the ferroelectric layer in PZT, etc., so as to maintain the intended performance of the PZT ferroelectric layer, thereby simplifying and stabilizing film fabrication, and preventing the degradation of electrical characteristics and adverse effects on lower layers.

REFERENCES:
patent: 3860955 (1975-01-01), Shinozaki
patent: 4079411 (1978-03-01), Engelbrecht et al.
patent: 4105289 (1978-08-01), Hershel
patent: 4255019 (1981-03-01), Knop
patent: 4277138 (1981-07-01), Dammann
patent: 4649351 (1987-03-01), Veldkamp et al.
patent: 4686519 (1987-08-01), Yoshida et al.
patent: 4748614 (1988-05-01), Dammann et al.
patent: 4798448 (1989-01-01), Van Raalte
patent: 4807978 (1989-02-01), Grinberg et al.
patent: 4846552 (1989-07-01), Veldkamp et al.
patent: 4882619 (1989-11-01), Hasegawa et al.
patent: 4895790 (1990-01-01), Swanson et al.
patent: 4933649 (1990-06-01), Swanson et al.
patent: 4983032 (1991-01-01), Van Den Brandt
patent: 5005102 (1991-04-01), Larson
patent: 5027359 (1991-06-01), Leger et al.
patent: 5033060 (1991-07-01), Leger et al.
patent: 5046043 (1991-09-01), Miller et al.
patent: 5089023 (1992-02-01), Swanson
patent: 5124843 (1992-06-01), Leger et al.
patent: 5148157 (1992-09-01), Florence
patent: 5161042 (1992-11-01), Hamada
patent: 5161059 (1992-11-01), Swanson et al.
patent: 5164808 (1992-11-01), Evans, Jr. et al.
patent: 5218471 (1993-06-01), Swanson et al.
patent: 5231432 (1993-07-01), Glenn
patent: 5233385 (1993-08-01), Sampsell
patent: 5262920 (1993-11-01), Sakuma et al.
patent: 5264880 (1993-11-01), Sprague et al.
patent: 5272551 (1993-12-01), Lehureau et al.
patent: 5344447 (1994-09-01), Swanson
patent: 5382961 (1995-01-01), Gale, Jr.
patent: 5392189 (1995-02-01), Fazan et al.
patent: 5442411 (1995-08-01), Urbanus et al.
patent: 5442480 (1995-08-01), Swanson et al.
patent: 5448314 (1995-09-01), Heimbuch et al.
patent: 5457493 (1995-10-01), Leddy et al.
patent: 5497269 (1996-03-01), Gal
patent: 5506166 (1996-04-01), Sandu et al.
Swanson, Gary J. et al., "Aperture Filling of Phase-Locked Laser Arrays," Optics Letters, 12:245-247 (1987).
H. Damman, "Color Separation Gratings", Applied Optics, vol. 17, No.15, 1Aug.1978, pp.2273-2275.
R.F. Edgar, "The Fresnel Diffraction Images of Periodic Structures", Optica Acta, vol. 16, No. 3, Jun. 1969, pp. 281-287.
M.W.Farn, et al., "Color Separation Gratings", Conf. On Binary Optics, NASA Conf. Pubs. 3227, Feb. 1993, pp.409-421.
IBM Techincal Disclosure Bulletin, vol. 36, No. 09B, Sep. 1993, pp. 453-456.
M.W. Farn, et al., "Color Separation by Use of Binary Optics", Optics Letters, vol. 18, No. 15, Aug. 1, 1993, pp. 1-3.

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