Method for forming high contrast alignment marks

Details Method for forming high contrast alignment marks Method for forming high contrast alignment marks

1996-10-16

1999-01-12

Bowers, Charles

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having substrate registration feature

438636, 438637, 438688, 438698, 438462, 438699, 438702, 438703, H01L 2176

Patent

active

058588540

ABSTRACT:
A method of forming high contrast alignment marks on an integrated circuit wafer for patterning a layer of highly reflective electrode metal is described. A method of patterning a layer of highly reflective metal on an integrated circuit wafer using high contrast alignment marks is also described. Due to a difference in height of alignment marks and contact metal surrounding the alignment marks the alignment marks are transferred to the contour of the highly reflective electrode metal. A non reflective layer of bottom anti-reflection coating material is then used to provide high contrast at the location where the edges of the alignment marks are transferred to the highly reflective electrode metal.

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patent: 5118639 (1992-06-01), Roth et al.
patent: 5271798 (1993-12-01), Sandhu et al.
patent: 5316966 (1994-05-01), Van Der Plas et al.
patent: 5401691 (1995-03-01), Caldwell
patent: 5705320 (1998-01-01), Hsu et al.

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