Method for forming heterojunction bipolar transistors

Details Method for forming heterojunction bipolar transistors Method for forming heterojunction bipolar transistors

1995-04-06

1997-04-29

Niebling, John

Semiconductor device manufacturing: process

Having diamond semiconductor component

438317, 438931, 438932, H01L 21265

Patent

active

056248539

ABSTRACT:
A pnp transistor is formed having a heterojunction of p-type diamond (or BP.sub.x N.sub.1-x, 6HSiC) and n-type SiC (3CSiC). The transistor is formed such that a p.sup.+ -SiC (3CSiC) layer, a p-SiC (3CSiC) layer, an n.sup.+ -SiC (3CSiC) layer, a p-diamond (or BP.sub.x N.sub.1-x, 6HSiC) layer, and a p.sup.+ -diamond (or BP.sub.x N.sub.1-x, 6HSiC) layer are on a substrate, and a collector electrode, a base electrode. An emitter electrode is formed on and electrically connected to the p.sup.+ -Sic layer, the n.sup.+ -SiC layer, and the layer, respectively. This method produces a semiconductor device having a high resistance to various environmental conditions.

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