Method for forming hafnium carbide and hafnium nitride...

Synthetic resins or natural rubbers -- part of the class 520 ser – Synthetic resins – From aluminum- or heavy metal-containing reactant

Reexamination Certificate

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C556S061000

Reexamination Certificate

active

07572881

ABSTRACT:
Hafnium containing preceramic polymer is made through the reaction of hafnium halide compound with any of the following compounds: ethylene diamine, dimethyl ethylene diamine, piperazine, allylamine and or polyethylene-imine.

REFERENCES:
patent: 2269498 (1942-01-01), Wainer
patent: 3630766 (1971-12-01), Economy et al.
patent: 3671292 (1972-06-01), Hirshfeld et al.
patent: 3787368 (1974-01-01), Lander
patent: 5399378 (1995-03-01), Uemura et al.
patent: 5443771 (1995-08-01), Gupta
patent: 5883278 (1999-03-01), Strickler et al.
patent: 5900498 (1999-05-01), Winter et al.
patent: 6277440 (2001-08-01), Reynolds
patent: 6355338 (2002-03-01), Hilmas et al.
patent: 6403750 (2002-06-01), Pope et al.
patent: 6831188 (2004-12-01), Beard et al.
patent: 7030450 (2006-04-01), Lee et al.
patent: 7238821 (2007-07-01), Meiere et al.
patent: 1 394 164 (2004-03-01), None

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