Method for forming grain boundary junction devices using high T.

Details Method for forming grain boundary junction devices using high T. Method for forming grain boundary junction devices using high T.

1992-09-16

1994-01-11

King, Roy

Superconductor technology: apparatus, material, process

High temperature , per se

Having tc greater than or equal to 150 k

505701, 505702, 505728, 427 62, 427 63, 427526, 427595, 427596, 257 33, 257 34, B05D 512, H01B 1200

Patent

active

052781402

ABSTRACT:
A method is disclosed for fabricating grain boundary junction devices, which comprises preparing a crystalline substrate containing at least one grain boundary therein, epitaxially depositing a high Tc superconducting layer on the substrate, patterning the superconducting layer to leave at least two superconducting regions on either side of the grain boundary and making electrical contacts to the superconducting regions so that bias currents can be produced across the grain boundary.

REFERENCES:
patent: 4980341 (1990-12-01), Gehring
patent: 5157466 (1992-10-01), Char et al.
Kobayashi et al, "Growth of high Tc superconductor films and application to new electronics", Funtai Oyobi Funmatsu Yakin, 34(10), pp. 563-566 Japan, 1987.
Tanabe et al, "Grain Boundary Josephson Junctions Using Y-Ba-Cu-O films operative at 77K", Jpn. J. Appl. Phys. 27(12) Dec. 1987 pp. L1961-L1963.

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