Method for forming gallium arsenide from thin solid films of gal

Details Method for forming gallium arsenide from thin solid films of gal Method for forming gallium arsenide from thin solid films of gal

1984-11-20

1986-06-10

Newsome, John H.

Coating processes

Electrical product produced

Welding electrode

420555, 420579, 427 541, 427 87, B05D 306

Patent

active

045942641

ABSTRACT:
A method for depositing GaAs on a substrate is disclosed, involving applying a thin liquid film of a gallium-arsenic complex solution to the substrate and evaporating arsenide complex. The gallium-arsenic complex is selected from the group of complexes having the formula X.sub.3 GaAsR.sub.3 where X is chlorine, bromine, iodine, phenyl, methyl or trifluoromethyl and R is by hydrogen, phenyl, benzyl, methyl or trifluoromethyl.
The thin solid film is irradiated with ultraviolet light at a sufficient wavelength and of a sufficient intensity to photochemically convert the gallium-arsenic complex to GaAs.

REFERENCES:
patent: 3342551 (1967-09-01), Dotzer
patent: 3394390 (1968-07-01), Cheney
patent: 4250202 (1981-02-01), Constant et al.
patent: 4340617 (1982-07-01), Deutsch et al.
patent: 4399097 (1983-08-01), Gallagher et al.
patent: 4427714 (1984-01-01), Davey
patent: 4509997 (1985-04-01), Cockayne et al.
Harrison et al., IBM Tech. Disc. Bull., vol. 4, No. 1, Jun. 1961, p. 32.

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