Method for forming floating gate semiconductor device by selecti

Details Method for forming floating gate semiconductor device by selecti Method for forming floating gate semiconductor device by selecti

1976-08-19

1979-07-24

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148187, 357 23, 357 24, 357 59, 357 91, H01L 21265, H01L 21324, B01J 1700

Patent

active

041621760

ABSTRACT:
A semiconductor device for use as a non-volatile semiconductor memory is provided with a floating gate formed by ion implantation.

REFERENCES:
patent: 3945031 (1976-03-01), Kahng et al.
patent: 3996657 (1976-12-01), Simko et al.
patent: 4004159 (1977-01-01), Rai et al.
patent: 4043024 (1977-08-01), Iwamatsu
patent: 4047974 (1977-09-01), Harari
patent: 4057895 (1977-11-01), Ghezzo
Golanski et al., ". . . Si Bombarded with 140 Kev Si Ions," Radiation Effects, 25, (1975), 213.

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