Method for forming fine titanium nitride film and method for fab

Details Method for forming fine titanium nitride film and method for fab Method for forming fine titanium nitride film and method for fab

1995-05-22

1997-02-18

Quach, T. N.

Fishing, trapping, and vermin destroying

437 60, 437190, 437192, 437200, H01L 21283, H01L 21336

Patent

active

056041403

ABSTRACT:
A method for forming a fine titanium nitride film and a method for fabricating a semiconductor element using this method. The method for forming a fine titanium nitride film includes the steps of depositing a titanium nitride film on a semiconductor substrate such as with a reactive sputtering method, introducing oxygen into the columnar structured grain boundaries of the titanium nitride film such as by exposing the titanium nitride film to atmosphere, depositing a titanium film on the titanium nitride film having oxygen stuffed therein, converting the titanium film into a fine titanium nitride film by subjecting the titanium film to two times of a heat treatment process. In case a COB DRAM element bit line is formed of tungsten, the fine titanium nitride film and the underlying oxygen-stuffed titanium nitride film, serving as barriers for preventing high temperature diffusion of the tungsten, allow a tungsten bit line having excellent contact and barrier properties. In case the fine titanium nitride film is used as an MOS transistor gate, a gate which can satisfy the thermal stability of a polysilicon as well as the low resistivity of a silicide may be obtained.

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patent: 5378660 (1995-01-01), Ngan et al.
patent: 5420070 (1995-05-01), Matsuura et al.

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