Method for forming fine pattern of semiconductor device

Details Method for forming fine pattern of semiconductor device Method for forming fine pattern of semiconductor device

2007-02-26

2009-02-24

Cao, Phat X (Department: 2813)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S708000, C257SE21302

Reexamination Certificate

active

07494935

ABSTRACT:
A method for forming a fine pattern of a semiconductor device includes forming a first photoresist film pattern over a semiconductor substrate including an underlying layer, exposing the first photoresist film pattern to generate an acid from the first photoresist film pattern, bleaching the first photoresist film pattern, and forming a second photoresist film pattern between the first photoresist patterns.

REFERENCES:
patent: 4961820 (1990-10-01), Shinagawa et al.
patent: 2005/0056913 (2005-03-01), Farnworth
patent: 2007/0042298 (2007-02-01), Jung et al.
patent: 10-2002-0000351 (2002-01-01), None
patent: 10-2002-0061479 (2002-07-01), None
patent: 10-2006-0032301 (2006-04-01), None
patent: 10-2006-0084051 (2006-07-01), None

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