Method for forming film of refractory metal

Details Method for forming film of refractory metal Method for forming film of refractory metal

1995-10-23

1997-11-11

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

437200, H01L 2144

Patent

active

056863551

ABSTRACT:
A method for forming a film of refractory metal used for interconnection in a semiconductor integrated circuit and, above all, to a method for forming a tungsten film (Blk-W film) by a blanket CVD method. A blanket tungsten (Blk-W) film 10 is formed with good adherence and coverage on an SiO.sub.X based interlayer insulating film 3 having a minute-sized contact hole 4 for improving reliability in an interconnection. Before proceeding to Blk-W-CVD, a substrate having a Ti-based adherent layer 7 on its uppermost surface is heated and exposed to a silane-based gas atmosphere for forming Si-nuclei on its surface. A W-nucleus 9 is formed by reducing the WF.sub.6 gas with H.sub.2 and a Blk-W film 10 is also formed by reducing the WF.sub.6 with SiH.sub.4 under a rate determined by the rate of the surface reaction. If the substrate is preliminarily heated before forming the Si nuclei, formation of the Si nuclei proceeds with improved uniformity. The W-nuclei may be carried out uniformly in a temperature range of 450.degree. C. or higher. If the substrate heating temperature during high speed growth is lowered to a temperature lower than that during W-nucleus formation, the thermal stress in the substrate may be released for further improving adherence between the Blk-W film 10 and the substrate.

REFERENCES:
patent: 5028565 (1991-07-01), Chang et al.
patent: 5429991 (1995-07-01), Iwasaki et al.
patent: 5517037 (1996-05-01), Yamamoto
patent: 5529953 (1996-06-01), Shoda
C.M. Melliar-Smith, et al., "Chemically Vapor Deposited Tungsten for Semiconductor Metallizations", J. of Electrochemical Soc., vol. 121, No. 2, pp. 298-303.
K. R. Laud, et al., "Blanket CVD-W Formed by SiH.sub.4 Reduction on WF.sub.6 on TiN for Planar Interconnection", Extended Abstracts of the 21st Conference on Solid State Devices and Materials;, Tokyo 1989, pp. 41-44.

Affiliated with

Also associated with

Rating

Method for forming film of refractory metal does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming film of refractory metal, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming film of refractory metal will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1228706