Method for forming field oxide film in semiconductor device

Details Method for forming field oxide film in semiconductor device Method for forming field oxide film in semiconductor device

1996-11-14

1997-09-09

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438699, 438437, H01L 2176

Patent

active

056656351

ABSTRACT:
A method for forming field oxide films in a semiconductor device, characterized by treating a trench mask and a trench oxide to make their surfaces positively charged so that an ozone-TEOS USG film might be deposited at a rapid rate on the trench oxide but at slow rate on the trench mask, whereby production yield can be significantly improved.

REFERENCES:
patent: 5094972 (1992-03-01), Pierce et al.
patent: 5308786 (1994-05-01), Lur et al.
patent: 5354387 (1994-10-01), Lee et al.
patent: 5492858 (1996-02-01), Bose et al.

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