Method for forming fibrous silicon carbide insulating material

Chemistry of inorganic compounds – Silicon or compound thereof – Binary compound

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501 88, 501 90, C04B 3556

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active

044811799

ABSTRACT:
A method whereby silicon carbide-bonded SiC fiber composites are prepared from carbon-bonded C fiber composites is disclosed. Carbon-bonded C fiber composite material is treated with gaseous silicon monoxide generated from the reaction of a mixture of colloidal silica and carbon black at an elevated temperature in an argon atmosphere. The carbon in the carbon bond and fiber is thus chemically converted to SiC resulting in a silicon carbide-bonded SiC fiber composite that can be used for fabricating dense, high-strength high-toughness SiC composites or as thermal insulating materials in oxidizing environments.

REFERENCES:
patent: 3577344 (1971-05-01), Ardary et al.
patent: 3653851 (1972-04-01), Gruber
patent: 3702279 (1972-11-01), Ardary et al.
patent: 3793204 (1974-02-01), Ardary et al.
patent: 4118464 (1978-10-01), Cutler

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