Method for forming ferroelectric film and semiconductor device

Details Method for forming ferroelectric film and semiconductor device Method for forming ferroelectric film and semiconductor device

2006-11-07

2006-11-07

Fourson, George R. (Department: 2823)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S240000, C438S244000, C438S253000, C438S387000

Reexamination Certificate

active

07132300

ABSTRACT:
In a method for forming a ferroelectric film of insulating metal oxide on a surface of an electrode with a concave or a convex or in convex shape which is formed above a substrate, multiple types of source gases constituting a material gas and each containing an organometallic compound are introduced into a chamber and main components of the multiple types of source gases are allowed to chemically react with one another with the chemical reaction proceeding depending on the reaction rate. Then, the ferroelectric film is deposited on the surface of the electrode.

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