Method for forming ferrocapacitors and FeRAM devices

Details Method for forming ferrocapacitors and FeRAM devices Method for forming ferrocapacitors and FeRAM devices

2008-01-08

2008-01-08

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S629000, C438S633000, C438S710000

Reexamination Certificate

active

07316980

ABSTRACT:
Ferrocapacitors having a vertical structure are formed by a process in which a ferroelectric layer is deposited over an insulator. In a first etching stage, the ferroelectric material is etched to form openings in it, leaving the insulating layer substantially intact. Then a conductive layer is deposited into the openings formed in the ferroelectric layer, forming electrodes on the sides of the openings. Further etching is performed to form gaps in the Al2O3layer, for making connections to conductive elements beneath it. Thus, by the time the second etching step is performed; there are already electrodes overlying the sides of the ferroelectric material, without insulating fences in between.

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