Fishing – trapping – and vermin destroying
Patent
1994-08-17
1995-06-06
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 69, 437 72, 437 73, H01L 2176
Patent
active
054223008
ABSTRACT:
Defect-free field oxide isolation is achieved using a laminated layer (14) of thermal silicon dioxide and chemically vapor deposited silicon dioxide underneath a silicon nitride field oxidation mask (18). The laminated layer (14) of silicon dioxide is formed on a silicon substrate (12) and a layer of silicon nitride is then deposited over it. The silicon nitride is subsequently patterned to form a field oxidation mask (18) which defines isolation regions (22) within the silicon substrate (12). Field oxide (34) is grown in the isolation regions (22) of the silicon substrate (12) and the field oxidation mask (18) is subsequently removed.
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Cooper Kent J.
Kenkare Prashant
Nguyen Bich-Yen
Pfiester James R.
Cooper Kent J.
Dang Trung
Hearn Brian E.
Motorola Inc.
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